Memristive Behavior of Mixed Oxide Nanocrystal Assemblies

Recent advances in memristive nanocrystal assemblies leverage controllable colloidal chemistry to induce a broad range of defect-mediated electrochemical reactions, switching phenomena, and modulate active parameters. The sample geometry virtually all resistive studies involves thin film layers comprising monomodal diameter nanocrystals. Here we explore the evolution bipolar threshold across highly ordered, solution-processed nanoribbon mixtures BaZrO3 (BZO) SrZrO3 (SZO) effects size, packing density, A-site substitution on operating voltage (VSET VTH) mechanism were studied through systematic comparison heterogeneity (i.e., BZO–BZO vs BZO–SZO) bimodal size distributions small–small small–large). Analysis current–voltage response confirms that tip-induced, trap-mediated space-charge-limited current trap-assisted tunneling processes drive low- high-resistance states, respectively. Our results demonstrate both smaller nanocrystals heavier alkaline earth decrease onset improve stability state retention mixtures, thus providing base correlation informs fabrication solution-processed, assemblies.